1 2020_21 BTEC Assignment Brief Template Issue Date: June 2020 Owner: BTEC Assessment DCL1 Public (Unclassified) Version 1.0 BTEC Assignment Brief Qualification BTEC Higher Nationals in Engineering...

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1 2020_21 BTEC Assignment Brief Template Issue Date: June 2020 Owner: BTEC Assessment DCL1 Public (Unclassified) Version 1.0 BTEC Assignment Brief Qualification BTEC Higher Nationals in Engineering Unit or Component number and title Unit 19: Electrical and Electronic Principles M/615/1493 Level 4 Learning aim(s) (For NQF/RQF only) LO3 Describe the basis of semiconductor action, and its application to simple electronic devices Assignment title LO3 Describe the basis of semiconductor action, and its application to simple electronic devices Assessor Stephen Hillyard Hand out date Hand in deadline Vocational Scenario or Context You are employed as an Electrical/Electronic specialist at a Northampton Electrical Engineering consultancy firm. The company carry out design and build of prototype electronic circuits and as part of your role you are also required to educate your peers on certain topics as defined by your manager to any new employees that come into post. You have been asked to provide a paper that can be distributed to a group of new starters and you are required to describe the basis of semiconductor action, and its application to simple electronic devices. Your manager has set out how he wants you to put he paper together. Task 1 Introduction: Semiconductor material is widely used in electronics circuit and devices due to its special property; the combination of different type of semiconductors material could make device which control electric current passing through them. Semiconductors are used to fabricate chips for every electronic device including computers, cell phones, iPods, Blackberries, and GPSs. Through studying different type of semiconductor devices, you are asked to answer the following questions: Task 1 2 2020_21 BTEC Assignment Brief Template Issue Date: June 2020 Owner: BTEC Assessment DCL1 Public (Unclassified) Version 1.0 a) Describe in detail of how a p-n junction diode operates in terms of free moving electrons (you should include relevant sketches to assist your explanation). Hint- What is a semiconductor material? – electrons, protons, valence shell, impurity, free electrons, carriers, holes, n-type, p-type, valency electrons, covalent bonds. Conduction in a semiconductor, The p-n junction – majority carriers, contact potential, depletion layer, minority carriers, diffusion, Forward and reverse biased, breakdown voltage. Characteristic curves. b) Demonstrate the action of the following semiconductor devices; i. Diode Hint: general description of a diode - anode and cathode, general characteristics e.g. IN4148 - max repetitive reverse voltage, max forward current, max reverse current, Application ii. Zener diode Hint: General description, action of the Zener, avalanche breakdown, doping, circuit symbol, characteristic curve, use as a voltage regulator. iii. Transistor as a switch Hint: General description of a Bi-polar Junction Transistor, diagrams, symbols, Transistor action - n-p-n, p-n-p, transistor as a switch - which region of the characteristic does it operate, cut-off region, saturation region, circuit diagram, n-p-n common emitter arrangement. c) Explain the operation of an: Op-Amp, an Opto-isolator and a JUGFET transistor in terms of simple semiconductor theory, suggesting appropriate applications. 3 2020_21 BTEC Assignment Brief Template Issue Date: June 2020 Owner: BTEC Assessment DCL1 Public (Unclassified) Version 1.0 d) Critically evaluate the performance of ‘enhancement type’ and ‘depletion type’ of MOSFET in terms of simple semiconductor theory and suggesting appropriate applications for each. Checklist of evidence required Criteria covered by this task: Unit/Criteria reference To achieve the criteria you must show that you are able to: LO3 Describe the basis of semiconductor action, and its application to simple electronic devices. P3 Describe the behaviour of a p-n junction in terms of semiconductor behaviour P4 Demonstrate the action of a range of semiconductor devices M3 Explain the operation of a range of discrete semiconductor devices in terms of simple semiconductor theory D3 Critically evaluate the performance of a range of discrete semiconductor devices in terms of simple semiconductor theory, suggesting appropriate applications for each. Sources of information to support you with this Assignment Please refer to notes and lesson recordings to support your completion of this assignment. Other assessment materials attached to this Assignment Brief None
Answered 40 days AfterMay 01, 2021

Answer To: 1 2020_21 BTEC Assignment Brief Template Issue Date: June 2020 Owner: BTEC Assessment DCL1 Public...

Himanshu answered on May 05 2021
128 Votes
1. C. Junction Field Effect Transistor 
This is the most basic transistor type of field effect and is commonly simply called a FET. The term unipolar refers to
the fact that the current flow through the device involves only one type of major carrier. (In contrast to the bipolar transistor involving electric and holes flow).
The Source, the Gate and the Drain are three terminals. The N channel FET circuit symbol is displayed below. A drain current flows when a voltage is applied between he source. However, the current going from drain to source can be controlled by an appropriate voltage between the gate and source (similar to the way that the base current controls the collector current in a bipolar transistor). The FET can therefore be employed as both a switch and a signal amplifier like the bipolar transistor. Each device has advantages and disadvantages compared to the other when used in these applications.

N-Channel FET                            P-Channel FET
MOSFETs are three terminal devices with a Gate, Drain and Source and both P-channel (PMOS) and N-channel (NMOS) MOSFETs are available. The main difference this time is that MOSFETs are available in two basic forms:
· Depletion Type   –   the transistor requires the Gate-Source voltage, ( VGS ) to switch the device “OFF”. The depletion mode MOSFET is equivalent to a “Normally Closed” switch.
· Enhancement Type   –   the transistor requires a Gate-Source voltage, ( VGS ) to switch the device “ON”. The enhancement mode MOSFET is equivalent to a “Normally Open” switch.
The...
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