1. Based on the MOSFET IRF540 transistor's technical sheet provided in the next pages (from ON table given that VGS = 3.558 V) , determine the values of the transistor's DC voltages (VDS, VDG, VGS) as...

1. Based on the MOSFET IRF540 transistor's technical sheet provided in the next pages (from ON table given that VGS = 3.558 V) , determine the values of the transistor's DC voltages (VDS, VDG, VGS) as well as the current ID for an operating point in the saturation mode for TC = 25?C. 2. When considering the transistor in Saturation mode, use its technical sheet to determine its characteristics in small-signal characteristics. If maximum and minimum values are specified, take their average as the nominal value. 3. Let: kn' = 60 mA/V -2 ; L = 4 µm ; ? = 10-2 V -1 ; W = 500 µm; and vGS = 3.558 V Using the values you obtained in Step 1 and the relationship below, find the value of Vt : iD=1/2*µn*Cox*W/L*(vGS-vt)^2 *(1+?vDS)=1/2*kn'*W/L*(vGS-vt)^2 *(1+?vDS) 4. Determine the expression of transistor transconductance (gm) based on k', W, L and ID assuming that there is no channel modulation (? = 0). 5. Considering the biasing circuit of Figure 1, calculate the DC transistor drain current with R1 = 40 kO and R2 = 10 kO. 6. Consider the common source circuit (CS) in Figure 2. By replacing the MOSFET transistor with its AC small signal equivalent model, draw the AC circuit diagram. 7. Perform an AC small-signal analysis of the circuit to deduce the following parameters: Avs = vout /vs =_____ , Av = vout /vin =_____ , Ais = iL /is =_____ , Rin = vin /is =_____ You can ignore the channel modulation effect and make acceptable simplifying assumptions during your analysis