1. Compare the resistivities for intrinsic (undoped) silicon and gallium arsenide at room temperature. Is either of these materials suitable as an insulating substrate for integrated circuits? (Assume that a resistivity greater than 10 MWcm is required.)
2. CMOS integrated circuits require p-type silicon substrates with a resistivity of 20 Ωcm. Specify the dopant and its required concentration.
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