1. Estimate β F for an npn bipolar transistor assuming that the emitter injection efficiency and the collector multiplication factor are both unity. The base width is 120 nm, the base doping is 10 18...

1. Estimate β_F
for an npn bipolar transistor assuming that the emitter injection efficiency and the collector multiplication factor are both unity. The base width is 120 nm, the base doping is 10¹⁸
cm^–3, and the base minority carrier lifetime is 1.0 ns

2. Estimate β_F
for a lateral pnp bipolar transistor assuming that emitter injection efficiency and the collector multiplication factor are both unity. The base width is 250 nm, the base doping is 10¹⁷
cm^–3, and the base minority carrier lifetime is 3.0 ns.