1. Estimate the reverse saturation current for an npn bipolar transistor if the undepleted base width is 120 nm, the base doping is 10 18 cm –3 , the base minority carrier lifetime is 1.0 ns, and the...

1. Estimate the reverse saturation current for an npn bipolar transistor if the undepleted base width is 120 nm, the base doping is 10¹⁸
cm^–3, the base minority carrier lifetime is 1.0 ns, and the emitter area is 10^–4
cm².

2. Estimate the emitter area for an npn bipolar transistor if the forward active collector current is 1 mA with a base–emitter voltage of 0.75 V. The base width is 180 nm and the base doping is 10¹⁷
cm^–3. Assume the forward emission coefficient is unity and the series resistances are negligible.