1. Suppose a diode has a unity emission coefficient. Determine the change in the forward-bias voltage that will cause a 10-fold increase in the forward current
2. Consider a Si p+–n junction at 300 K with Na= 1018cm–3and Nd= 1016cm–3. The junction area is 10–5cm2. Determine the
1. Built-in potential
2. Zero-bias depletion width
3. Zero-bias depletion capacitance
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