Calculate the zero-bias threshold voltage for a p-channel MOSFET with t OX = 6 nm and N d = 10 16 cm –3. Assume that the gate is heavily doped p-polysilicon (with the Fermi level coincident with the...

Calculate the zero-bias threshold voltage for a p-channel MOSFET with t_OX
= 6 nm and N_d
= 10¹⁶
cm^–3.
Assume that the gate is heavily doped p-polysilicon (with the Fermi level coincident with the valence band) and that 10¹¹
cm^–2
positive charges are in the oxide. A phosphorus dose of 5 x 10¹¹
cm^–2
is implanted to adjust the threshold voltage.