Calculate the zero-bias threshold voltage for an n-channel MOSFET with t OX = 6 nm and N a = 1.2 x 10 16 cm –3. Assume that the gate is heavily-doped n-polysilicon (with the Fermi level coincident...

Calculate the zero-bias threshold voltage for an n-channel MOSFET with t_OX
= 6 nm and N_a
= 1.2 x 10¹⁶
cm^–3.
Assume that the gate is heavily-doped n-polysilicon (with the Fermi level coincident with the conduction band) and that 10¹¹
cm^–2
positive charges are in the oxide. A boron dose of 10¹²
cm^–2
is implanted to adjust the threshold voltage