Consider Cu level-one interconnect, 0.5 μm wide and 1.0 μm high, on 1.5 μm of carbon-doped silicon dioxide. Estimate the ranges of length for which the following models are appropriate: a) the lumped...

Consider Cu level-one interconnect, 0.5 μm wide and 1.0 μm high, on 1.5 μm of carbon-doped silicon dioxide. Estimate the ranges of length for which the following models are appropriate: a) the lumped capacitance model, b) the distributed rc model, and c) the transmission line model. For the CMOS driving gate, t_p
= C_L(1 ps/fF).