Consider n-channel and p-channel silicon MOSFETs fabricated on the same wafer with channel lengths of 0.5 μm and 20-nm thick silicon dioxide
1. Determine the process transconductance parameters for n-channel and p-channel devices.
2. Determine the required aspect ratios for n-channel and p-channel MOSFETs such that the device transconductance parameters are both 0.5 mA/V2.
3. Determine the oxide capacitances of the devices. (The oxide capacitance is approximately the parallel plate capacitance for plates of area W x L and separation tOX.)
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