Consider n-channel and p-channel silicon MOSFETs fabricated on the same wafer with channel lengths of 0.3 μm and 14-nm thick silicon dioxide. 1. Determine the process transconductance parameters for...

Consider n-channel and p-channel silicon MOSFETs fabricated on the same wafer with channel lengths of 0.3 μm and 14-nm thick silicon dioxide.

1. Determine the process transconductance parameters for n-channel and p-channel devices.

2. Determine the required aspect ratios for n-channel and p-channel MOSFETs such that the device transconductance parameters are both 0.5 mA/V².

3. Determine the oxide capacitances of the devices. (The oxide capacitance is approximately the parallel plate capacitance for plates of area W x L and separation t_OX.)