National university CEE420L Microelectronics Lab Lab XXXXXXXXXXpoints Week 7 Learning Outcomes After completing this Lab-7 you will be able to explain or/and perform the following activities: a-...

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National university CEE420L Microelectronics Lab Lab-7 110 points Week 7 Learning Outcomes After completing this Lab-7 you will be able to explain or/and perform the following activities: a- Observe the behavior of a CascodeMOSFET amplifier b- Learn how a MOSFET transistor can be biased for amplification c- Practice how to use a transistor datasheet to design an amplifier per given specification. Reading: Electronic Devices, Floyd, 10th Edition, Chapter 9 Lab report format: Same as this document, report your results after each experiment, both word or PDF are acceptable Required hardware and software 1- a computer with installed NI multisim 14.2 Note: Always make sure your circuit is correctly implemented then connectvoltage supplies. Experiment 1(Simulation of a cascodeMOSFET amplifier circuit)30 points Figure1 is a broadband amplifier using two JFETs in a cascode arrangement commonly used in RF (radio frequency) applications. One of the advantages of using a JFET is thatits high input impedance does not load the antenna and cause a reduction in signal voltage,resulting in poor signal reception. It also is a low noise device and can be locatedclose to the antenna before additional noise is picked up by the system. Generally, anantenna produces signal voltages in the microvolt range, and any signal loss because ofloading or noise can significantly degrade the signal. The active antenna also provides alarge voltage gain that results in a stronger signal to the receiver with improved signal-tonoiseratio. Figure 1 In this experiment we are going to simulate the amplifier circuit for 10, 88 and500 MHz signal. The transistors used in the circuit are 2N5484 n-channel JFETs. https://www.mouser.com/ds/2/68/2n5484-5486-51207.pdf a- For the simulation of the circuit in Multisim represent the antenna input by a 10 uV peak source. The circuit could be similar to Figure 2 (a) b- Simulate the circuit at 10 MHz (similar to Figure 2 (b) but at 10 MHz) c- Simulate the circuit at 88 MHz (similar to Figure 2 (b) but at 88 MHz) d- Simulate the circuit at 500 MHz (similar to Figure 2 (c) but at 500 MHz) e- Determine the rms output voltage in b a-d, and calculate the gainfor all frequencies. f- Compare performance of the amplifier at the above frequencies and interpret it. g- Also search the internet and find the frequencies that the commercial FM radio are using and add to your lab report. h- Search the internet and find the frequencies that the mobile phones are using in the USA and add to your lab report. Figure 2 Experiment 2(Building MOSFET Biasing )40 points Implement the following circuit on Multisim an 2N7000 transistor and perform the following: a- Measure VGS b- Measure ID c- Apply a 20 mV rms, 5 KHz, SW (sinusoidal) to the input and measure the output rms and calculate the gain d- Compare your results with the theoretical result. Experiment 3(Building MOSFET amplifier) 40 points a- Design an amplifier using a 2N3797 that operates from a 24 V supply voltage. The typical dcdrain-to-source voltage should be approximately 12 V and the typical voltage gain should beapproximately 9 b- Implement the circuit on Multisim c- Measure the drain-to-source voltage d- Measure the voltage gain by injecting a 5 mV, 1 KHz signal to the input and measure the output and calculate the gain. e- Compare the result of c and d with a Hints: Find typical IDSS from the data sheet Find typical gm from the data sheet Assume zero biased amplifier for simplicity Assume Rs = 0 http://www.icbank.com/icbank_data/semi_qna/2N3796.pdf