EGRE 303 SEMICONDUCTOR ELECTRONIC DEVICES – SPRING 2022 A COMPREHENSIVE PN JUNCTION COMPUTER AIDED (CAD) PROJECT Due Date: Midnight April 14th, 2022 This project is designed for students for the...

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EGRE 303 SEMICONDUCTOR ELECTRONIC DEVICES – SPRING 2022 A COMPREHENSIVE PN JUNCTION COMPUTER AIDED (CAD) PROJECT Due Date: Midnight April 14th, 2022 This project is designed for students for the following: 1. Progressively develop a Computer Aided Design Software Tool from intrinsic to pn junction current voltage characteristics. 2. Learn by doing about the concept build up to IV Characteristics of semiconductor pn junction. You can work on this project individually or in teams of your choosing (teams must not exceed 4 students), but reports must be individual. For each part you are required to deliver the following: 1. For each part describe very briefly which equations you are using by defining the equation and if needed, one to two lines describing it. 2. Show your script for each part. 3. Show plots of the calculated data where applicable. Introduction: In this project, you develop a CAD tool that simulates the operation of a PN junction diode. In this project your program (Software Tool) will ask user about the material properties, the doping and applied voltage, and the CAD tool computes the internal and terminal current characteristics of the device. The code will have six basic parts, but each part builds on the previous ones. So, it is in a sense, one complete simulation code. Part 1. Intrinsic Carrier Concentration: Write a short code that asks the user for the temperature, bandgap, and hole and electron effective masses of a semiconductor. Have the program then calculate the intrinsic carrier concentration for the material at the specified temperature. Part 2. Built in Potential of PN Junction and Depletion Region width: Starting with Part 1 above, write a short code that asks the user for the Donor concentration on the N-side and the Acceptor concentration on the P-side of a PN junction, as well as the permittivity (epsilon) of the material. Remember permittivity is Ks x ε0. Have the program then calculate Built-In Potential for this PN junction diode. Also, have the program then calculate xn, -xp and the total depletion region width. Perform the calculation for zero applied voltage (Equilibrium). Part 3. Graphing the Internal Electric Field, Potential and Charge Concentration: Starting with Part 2 above, write a short code asks if the user wants to graph the internal electric field, electrostatic potential and/or the charge concentration. Then write the code to graph these quantities as a function of position inside the diode. Plot the quantities according to what the user has requested. In other words, plot one, two or all three of these internal PN junction quantities. Your plots should look similar to the depletion approximation solutions we discussed in the class and also in the book. Part 4: Effect of Applied Voltage: Repeat Parts 1 and 2, but this time, ask the user to specify the applied voltage. After specifying the voltage, have the code perform the analogous calculations as were performed in Parts 2 and 3, but this time with an applied bias. (*Note, for forward bias, allowed VA must be less than the built-in potential.) Part 5: Diode Carrier Concentration and Current: Ask the user to specify the applied voltage. For forward bias, the applied voltage must be less than the built-in potential. Assume that the recombination lengths for electrons and holes are both Ln = Lp = 10um. Also, assume the mobility of electrons and holes are 1000 cm2/V.sec and 500 cm2/V.sec, respectively. Calculate and graph the minority carrier concentrations as a function of position in the diode (n(x) on the P-side and p(x) on the N-side). Next, calculate and graph the electron and hole current densities as a function of position everywhere inside the device (Jn(x) and Jp(x)). Finally, assuming that the cross-sectional area of the device is 100um x 100um, calculate the terminal current of the diode in part 6. Part 6: Diode Current versus Voltage: Ask the user to specify a voltage range for calculating the diode current. Use the results from Part 5 to graph the current versus voltage for the range specified by the user. For forward bias, the applied voltage must be less than the built-in potential. Assume the diode is working at room temperature (27C=300K).
Answered 9 days AfterApr 09, 2022

Answer To: EGRE 303 SEMICONDUCTOR ELECTRONIC DEVICES – SPRING 2022 A COMPREHENSIVE PN JUNCTION COMPUTER AIDED...

Taruna Aggarwal answered on Apr 15 2022
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