Obtain commercially available bipolar transistors and enhancement type n-channel and p-channel MOSFETs for the construction of BiCMOS and CMOS inverters for the construction of three-stage ring...

Obtain commercially available bipolar transistors and enhancement type n-channel and p-channel MOSFETs for the construction of BiCMOS and CMOS inverters for the construction of three-stage ring oscillators as shown in Figure 11.19. From the manufacturer’s Web pages, obtain the data sheets for all three types of transistors.

1. Using SPICE, estimate the load capacitance, CL,₁₀₀, for which the average propagation delay will be 100 ns for the BiCMOS gate with a 5-V supply.

2. Build the BiCMOS ring oscillator using this value of capacitance. Measure and plot the average propagation delay vs. the supply voltage for the range 2 V ≤ V_DD
≤ 6 V.

3. 3. Using the CMOS ring oscillator, measure and plot the average propagation delay vs. the supply voltage for the range 2 V ≤ V_DD
≤ 6 V. Use the same load capacitance used for the BiCMOS measurements.

Figure 11.19