The cross-section of a silicon sample is sketched in Figure 6.44. Certain regions of the sample are coated with a 500 nm thick film of titanium. The sample was characterized by a scanning electron...

The cross-section of a silicon sample is sketched in Figure 6.44. Certain regions of the sample are coated with a 500 nm thick film of titanium. The sample was characterized by a scanning electron microscope that was equipped with secondary electron (SE), backscattered electron (BSE), and EDS detectors that were located at take-off angles of 45, 70, and 30^o, respectively. The accelerating voltage was 20 kV, and the incident electron beam was perpendicular to the sample surface.

(c) Sketch the expected, qualitative intensity distributions for all three detectors for a line-scan across the surface of the specimen. Explain the relative changes in the intensities that you predict as a function of the beam pos