The following assumptions are made for simplicity: Long and wide buriedchannel PMOS; uniform buried-channel concentration NA ¼ 5 1016 cm3; buried-channel junction depth xjbp ¼ 0.12 μm; N-well...

The following assumptions are made for simplicity: Long and wide buriedchannel PMOS; uniform buried-channel concentration NA ¼ 5 1016 cm3;

buried-channel junction depth xjbp ¼ 0.12 μm; N-well concentration at junction

ND ¼ 5 1016 cm3

; EOT teq ¼ 12.5 nm; degenerately doped N+

-poly gate;

temperature 25 C. Estimate: The threshold voltage and subthreshold slope.