We consider the channel depicted in Figure 3.10. The access gap for isotropic etching in Figure 3.11(b) is 1 µm. After sealing with thermal oxide, we need to inspect the channel and to open the access...

We consider the channel depicted in Figure 3.10. The access gap for isotropic etching in Figure 3.11(b) is 1 µm. After sealing with thermal oxide, we need to inspect the channel and to open the access gap. If the sealing thermal oxide layer is etched with a buffered HF solution, how large is the gap of the opening after etching away all silicon dioxide?