A 1024 X 1024 NOR type dynamic ROM cell has PMOS prechargetransistors of 1um/0.1um and NMOS pull-down transistors of0.5um/0.1um. Calculate the worst case high-to-low propagation delaytime of the...


A 1024 X 1024 NOR type dynamic ROM cell has PMOS precharge transistors of 1um/0.1um and NMOS pull-down transistors of 0.5um/0.1um. Calculate the worst case high-to-low propagation delay time of the bit line during read operation.


2 CLK bit line word line WLIO WL[1 WL1023 BLI1023 BL[1 BLIO

May 17, 2022
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