pls help with question 1.1 and 1.2 1.1. Given a semiconductor material with the following parameters: na 1.5 x 1010 carriersicm. No-6.1 x 105 carriers/cm, ?: 1 400 cm2N.sec, ?,-580 cm2n.sec described...

pls help with question 1.1 and 1.2

1.1. Given a semiconductor material with the following parameters: na 1.5 x 1010 carriersicm. No-6.1 x 105 carriers/cm, ?: 1 400 cm2N.sec, ?,-580 cm2n.sec described material is a p-type or n-type? determine the electron and hole drift velocity through the material. a) Assuming total ionisation, what is the electron and hole concentration? Hence, determine if the b) If a 5 Volts source is placed across a 0.001 cm layer of the above semiconductor material, 1.2. In the circuit shown below, assume diodes Di through Ds are identical and each exhibits an on-state voltage drop of 0 V. For each of the two input voltage conditions in the table below, calculate Vo and circle the state of each diode. Condition Vi(V) Vo (V) D1 ON OFF ON OFF ON/OFF ON / OFF ON / OFF | ON / OFF | ON / OFF | ON / oFF D2 D3 D4 C1 0 V C2 +10 V R1 3 10 ko Di Ds Di -10 V