need a lab report first introduction of the lab, background and theory procedure, Experimental Results, Conclusion,
EGRE 207 – Electrical Circuits II EGRE 306 – Introduction to Microelectronics Spring 2021 Lab 3 –MOSFET biasing Part I – Introduction to MOSFET Using Multisim, you will first measure the I-V characteristics of an n-channel MOSFET so that you can predict the transistor’s behavior. Then, you will take data to use the transistor as a voltage-controlled resistor. Set-Up Using Multisim, place a 2N7000 NMOS transistor and connect the Source pin to ground. Then, connect two separate DC power sources to the Gate and Drain pins. Finally, connect a current probe to measure the drain current. Part I – Simulation of Threshold Voltage To measure the threshold voltage, you will apply a large VDS voltage (10V) and slowly increase the gate voltage until you obtain a current. Remember that if VGS < vt,="" then="" the="" transistor="" will="" be="" in="" the="" cutoff="" region="" and="" “no”="" current="" will="" flow.="" continue="" to="" increase="" vgs="" and="" measure="" and="" plot="" the="" id="" vs.="" vgs="" graph="" for="" your="" transistor.="" your="" resulting="" graph="" should="" resemble="" the="" figure="" below.="" do="" not="" exceed="" 200ma.="" use="" a="" current="" of="" 1.0ma="" to="" determine="" the="" threshold="" voltage="" (vt).="" part="" ii="" –="" mosfet="" as="" a="" voltage="" controlled="" resistor="" (vcr)="" when="" the="" mosfet="" is="" in="" the="" triode="" region="" (small="" vds),="" it="" can="" be="" used="" as="" a="" voltage="" controlled="" resistor.="" by="" varying="" the="" gate="" voltage="" while="" in="" this="" region,="" the="" resistance="" of="" the="" channel="" will="" change.="" now,="" you="" will="" take="" data="" to="" help="" you="" calibrate="" your="" voltage-controlled="" resistor.="" 1.="" set="" vds="" to="" a="" small="" value="" (~50mv).="" 2.="" slowly="" change="" vgs="" and="" monitor="" the="" drain="" current="" for="" each="" gate="" voltage.="" 3.="" after="" you="" have="" completed="" this="" step="" for="" at="" least="" 5="" different="" gate="" voltages,="" change="" vds="" to="" ~100mv="" and="" repeat.="" for="" each="" vgs="" value,="" you="" now="" have="" 2="" data="" points.="" you="" can="" determine="" the="" resistance="" of="" each="" vgs="" value="" by="" using="" the="" following="" example="" as="" a="" guide:="" vds="0.05V" id="0.3mA" at="" vgs="3V" id="0.4mA" at="" vgs="4V" vds="0.1V" id="0.5mA" at="" vgs="3V" id="1.1mA" at="" vgs="4V" for="" vgs="3V" the="" drain="" current="" increased="" 0.2ma="" when="" the="" drain="" voltage="" increased="" by="" 0.05v.="" the="" channel="" resistance="" at="" vgs="3V" is:="" 0.05v="" 0.2ma="250" ="" for="" vgs="4V" the="" drain="" current="" increased="" 0.7ma="" when="" the="" drain="" voltage="" increased="" by="" 0.05v.="" the="" channel="" resistance="" at="" vgs="4V" is:="" 0.05v="" 0.7ma="71.4" ="" using="" this="" example="" as="" a="" guide,="" determine="" the="" resistance="" of="" your="" transistor="" for="" 5="" different="" gate="" voltages.="" 4.="" recall="" :="" using="" your="" results,="" determine="" the="" mosfet="" transconductance="" value="" (kn)="" for="" your="" transistor="" (calculate="" it="" for="" each="" of="" your="" ten="" data="" points).="" 5.="" determine="" the="" correct="" bias="" conditions="" (vgs)="" so="" that="" your="" transistor="" has="" a="" resistance="" of="" 110="" ohms.="" part="" i="" data.="" vt="____________" part="" ii="" data="" kn="____________" design:="" for="" rds="110" ohms:="" vgs="____________" lab="" 3="" –="" mosfet="" biasing="" part="" ii="" -="" dc="" biasing="" of="" mosfet="" using="" multisim,="" you="" will="" first="" estimate="" the="" parameters="" of="" a="" 2n7000="" n-channel="" mosfet="" so="" that="" you="" can="" properly="" bias="" the="" transistor.="" then,="" you="" will="" investigate="" alternate="" configurations="" of="" the="" bias="" circuit.="" part="" i="" –="" estimation="" of="" threshold="" voltage="" and="" mosfet="" transconductance="" (kn)="" 1.="" connect="" two="" separate="" power="" supplies="" to="" the="" drain="" and="" gate="" of="" your="" mosfet.="" apply="" a="" large="" vds="" voltage="" (5v).="" 2.="" connect="" the="" source="" to="" ground="" and="" use="" the="" ammeter="" to="" measure="" the="" drain="" current="" (between="" the="" vdd="" source="" and="" the="" drain="" of="" the="" transistor).="" 3.="" adjust="" the="" gate="" voltage="" until="" the="" current="" is="" approximately="" equal="" to="" 20ma.="" remember="" that="" if="" vgs="">< vt, then the transistor will be in the cutoff region and “no” current will flow. 4. record the gate voltage (vgs1). 5. increase vdd until the drain current is approximately equal to 80ma (~4 times the original id) 6. record the gate voltage (vgs2). using the data from steps 3, 4, 5, 6 and id = 0.5 kn (vgs1 – vt)24id = 0.5 kn (vgs2 – vt)2 you can estimate the threshold voltage (use exact values for id, 4id, vgs1 and vgs2). then, using your data and your estimate of vt, you can find kn. vgs1 = ______________id1 = ______________ vgs2 = ______________id2 = ______________ vt = ________________kn = ________________ q1: for all of these measurements, what region of operation is the transistor operating in? discuss with your partner how you know this. part ii – dc biasing circuit for mosfet 1. build the circuit on the right, using vdd = 15v, rg2 = 150k, and rs = 0 (short circuit). 2. find (calculate) rg1 and rd so that there will be a drain current of ~20ma and vds ~vdd/2 (the vdd voltage is split evenly between the resistor and the transistor). 3. attach rg1 and rd into your circuit, and measure vd and id. analysis hints: a. assume the transistor is operating in the saturation region. b. recall that the current entering the gate is zero. rg1 = _____________ rd = _____________ vg (actual) = _____________ vd (actual) = _____________id (actual) = _____________ q2: what are pros/cons of this biasing circuit (rs = 0). part iii – another dc biasing circuit for mosfet 1. build the circuit on the right, using your original transistor, vdd = 15v, rg2 = 150k, and rd = 470. 2. find (calculate) rg1 and rs so that vd ~vdd/2 and vds ~vdd/3. 3. attach rg1 and rs into your circuit, and measure vd, vs, and id. analysis hints: a. assume the transistor is operating in the saturation region. b. recall that the current entering the gate is zero. rg1 = _____________ rs = _____________ vg (actual) = _____________ vd (actual) = _____________ vs (actual) = _____________id (actual) = _____________ q3: what are pros/cons of this biasing circuit? lab 3 part i and lab 3 part ii will be combined into a single report assume that the audience for this report is an egre 306 student who didn’t complete the lab, but wants to know exactly what you did. he/she has been to class, so they are familiar with the concepts and the equipment that you use. the following information from part ii should be included to the lab report: **only have one of each section listed below, containing all of your work for each part (part i and part ii) of the lab** 1. cover page (as seen on previous templates, include: name, class, title, section, date, partner (if you have one), honor pledge - signed, etc.) 2. introduction to the lab: explain what the purpose of this lab was and a brief description of the purpose for each part of the lab you completed (max of 2 paragraphs). 3. background and theory: this includes relevant background information which explains why your experiment worked the way that it did. if taking reference from other sources, be sure to include citations. 3. procedure: this is an explanation of what you did, experimentally, in the lab. do not include results in this section. include schematics of circuits made. 4. experimental results: this is where you present the results of your experiments (data tables, screenshots, graphs, etc.). in addition, explain your results. 5. conclusion: this is where you write a summary of the experiment, including answers to all of the questions that were included in the lab handout. to be included: items that you should include in the appropriate sections are: 1. schematic diagram of your part i circuit (using multisim). include voltmeter/ammeter where you measured voltage and current. · description of how you determined vt for your transistor. · step-by-step explanation of how you determined the resistance values in part iii. a table of your data may be helpful. · from the part ii data, create a plot of rds (channel resistance) versus vov for your transistor, where vov = vgs - vt. discuss the relationship between rds and vov. 2. explanation (include experimental procedure, data table, and calculations) of how you determined the threshold voltage and mosfet transconductance parameters for your transistor. (this will be a lengthy answer) 3. schematic diagram of your part ii circuit (using multisim). include voltmeter/ammeter where you measured voltage and current. 4. part ii calculations, showing how you determined rd and rg1 that satisfy the given criteria. be sure to explain your calculations, not just a list of equations. 5. data table with all of your measured values from step ii.3 and ii.4. 6. schematic diagram of your part iii circuit (using multisim). include voltmeter/ammeter where you measured voltage and current. 7. part iii calculations, showing how you determined rs and rg1 that satisfy the given criteria. be sure to explain your calculations, not just a list of equations. 8. data table with all of your measured values from step iii.3 and iii.4. 9. answers/discussion for q1 – q3. vt,="" then="" the="" transistor="" will="" be="" in="" the="" cutoff="" region="" and="" “no”="" current="" will="" flow.="" 4.="" record="" the="" gate="" voltage="" (vgs1).="" 5.="" increase="" vdd="" until="" the="" drain="" current="" is="" approximately="" equal="" to="" 80ma="" (~4="" times="" the="" original="" id)="" 6.="" record="" the="" gate="" voltage="" (vgs2).="" using="" the="" data="" from="" steps="" 3,="" 4,="" 5,="" 6="" and="" id="0.5" kn="" (vgs1="" –="" vt)2="" 4id="0.5" kn="" (vgs2="" –="" vt)2="" you="" can="" estimate="" the="" threshold="" voltage="" (use="" exact="" values="" for="" id,="" 4id,="" vgs1="" and="" vgs2).="" then,="" using="" your="" data="" and="" your="" estimate="" of="" vt,="" you="" can="" find="" kn.="" vgs1="______________" id1="______________" vgs2="______________" id2="______________" vt="________________" kn="________________" q1:="" for="" all="" of="" these="" measurements,="" what="" region="" of="" operation="" is="" the="" transistor="" operating="" in?="" discuss="" with="" your="" partner="" how="" you="" know="" this.="" part="" ii="" –="" dc="" biasing="" circuit="" for="" mosfet="" 1.="" build="" the="" circuit="" on="" the="" right,="" using="" vdd="15V," rg2="150k," and="" rs="0" (short="" circuit).="" 2.="" find="" (calculate)="" rg1="" and="" rd="" so="" that="" there="" will="" be="" a="" drain="" current="" of="" ~20ma="" and="" vds="" ~vdd/2="" (the="" vdd="" voltage="" is="" split="" evenly="" between="" the="" resistor="" and="" the="" transistor).="" 3.="" attach="" rg1="" and="" rd="" into="" your="" circuit,="" and="" measure="" vd="" and="" id.="" analysis="" hints:="" a.="" assume="" the="" transistor="" is="" operating="" in="" the="" saturation="" region.="" b.="" recall="" that="" the="" current="" entering="" the="" gate="" is="" zero.="" rg1="_____________" rd="_____________" vg="" (actual)="_____________" vd="" (actual)="_____________ID" (actual)="_____________" q2:="" what="" are="" pros/cons="" of="" this="" biasing="" circuit="" (rs="0)." part="" iii="" –="" another="" dc="" biasing="" circuit="" for="" mosfet="" 1.="" build="" the="" circuit="" on="" the="" right,="" using="" your="" original="" transistor,="" vdd="15V," rg2="150k," and="" rd="470." 2.="" find="" (calculate)="" rg1="" and="" rs="" so="" that="" vd="" ~vdd/2="" and="" vds="" ~vdd/3.="" 3.="" attach="" rg1="" and="" rs="" into="" your="" circuit,="" and="" measure="" vd,="" vs,="" and="" id.="" analysis="" hints:="" a.="" assume="" the="" transistor="" is="" operating="" in="" the="" saturation="" region.="" b.="" recall="" that="" the="" current="" entering="" the="" gate="" is="" zero.="" rg1="_____________" rs="_____________" vg="" (actual)="_____________" vd="" (actual)="_____________" vs="" (actual)="_____________ID" (actual)="_____________" q3:="" what="" are="" pros/cons="" of="" this="" biasing="" circuit?="" lab="" 3="" part="" i="" and="" lab="" 3="" part="" ii="" will="" be="" combined="" into="" a="" single="" report="" assume="" that="" the="" audience="" for="" this="" report="" is="" an="" egre="" 306="" student="" who="" didn’t="" complete="" the="" lab,="" but="" wants="" to="" know="" exactly="" what="" you="" did.="" he/she="" has="" been="" to="" class,="" so="" they="" are="" familiar="" with="" the="" concepts="" and="" the="" equipment="" that="" you="" use.="" the="" following="" information="" from="" part="" ii="" should="" be="" included="" to="" the="" lab="" report:="" **only="" have="" one="" of="" each="" section="" listed="" below,="" containing="" all="" of="" your="" work="" for="" each="" part="" (part="" i="" and="" part="" ii)="" of="" the="" lab**="" 1.="" cover="" page="" (as="" seen="" on="" previous="" templates,="" include:="" name,="" class,="" title,="" section,="" date,="" partner="" (if="" you="" have="" one),="" honor="" pledge="" -="" signed,="" etc.)="" 2.="" introduction="" to="" the="" lab:="" explain="" what="" the="" purpose="" of="" this="" lab="" was="" and="" a="" brief="" description="" of="" the="" purpose="" for="" each="" part="" of="" the="" lab="" you="" completed="" (max="" of="" 2="" paragraphs).="" 3.="" background="" and="" theory:="" this="" includes="" relevant="" background="" information="" which="" explains="" why="" your="" experiment="" worked="" the="" way="" that="" it="" did.="" if="" taking="" reference="" from="" other="" sources,="" be="" sure="" to="" include="" citations.="" 3.="" procedure:="" this="" is="" an="" explanation="" of="" what="" you="" did,="" experimentally,="" in="" the="" lab.="" do="" not="" include="" results="" in="" this="" section.="" include="" schematics="" of="" circuits="" made.="" 4.="" experimental="" results:="" this="" is="" where="" you="" present="" the="" results="" of="" your="" experiments="" (data="" tables,="" screenshots,="" graphs,="" etc.).="" in="" addition,="" explain="" your="" results.="" 5.="" conclusion:="" this="" is="" where="" you="" write="" a="" summary="" of="" the="" experiment,="" including="" answers="" to="" all="" of="" the="" questions="" that="" were="" included="" in="" the="" lab="" handout.="" to="" be="" included:="" items="" that="" you="" should="" include="" in="" the="" appropriate="" sections="" are:="" 1.="" schematic="" diagram="" of="" your="" part="" i="" circuit="" (using="" multisim).="" include="" voltmeter/ammeter="" where="" you="" measured="" voltage="" and="" current.="" ·="" description="" of="" how="" you="" determined="" vt="" for="" your="" transistor.="" ·="" step-by-step="" explanation="" of="" how="" you="" determined="" the="" resistance="" values="" in="" part="" iii.="" a="" table="" of="" your="" data="" may="" be="" helpful.="" ·="" from="" the="" part="" ii="" data,="" create="" a="" plot="" of="" rds="" (channel="" resistance)="" versus="" vov="" for="" your="" transistor,="" where="" vov="VGS" -="" vt.="" discuss="" the="" relationship="" between="" rds="" and="" vov.="" 2.="" explanation="" (include="" experimental="" procedure,="" data="" table,="" and="" calculations)="" of="" how="" you="" determined="" the="" threshold="" voltage="" and="" mosfet="" transconductance="" parameters="" for="" your="" transistor.="" (this="" will="" be="" a="" lengthy="" answer)="" 3.="" schematic="" diagram="" of="" your="" part="" ii="" circuit="" (using="" multisim).="" include="" voltmeter/ammeter="" where="" you="" measured="" voltage="" and="" current.="" 4.="" part="" ii="" calculations,="" showing="" how="" you="" determined="" rd="" and="" rg1="" that="" satisfy="" the="" given="" criteria.="" be="" sure="" to="" explain="" your="" calculations,="" not="" just="" a="" list="" of="" equations.="" 5.="" data="" table="" with="" all="" of="" your="" measured="" values="" from="" step="" ii.3="" and="" ii.4.="" 6.="" schematic="" diagram="" of="" your="" part="" iii="" circuit="" (using="" multisim).="" include="" voltmeter/ammeter="" where="" you="" measured="" voltage="" and="" current.="" 7.="" part="" iii="" calculations,="" showing="" how="" you="" determined="" rs="" and="" rg1="" that="" satisfy="" the="" given="" criteria.="" be="" sure="" to="" explain="" your="" calculations,="" not="" just="" a="" list="" of="" equations.="" 8.="" data="" table="" with="" all="" of="" your="" measured="" values="" from="" step="" iii.3="" and="" iii.4.="" 9.="" answers/discussion="" for="" q1="" –="">