this is a Micro-electric Lab, need to be done using Multisim Live, you need to write a good Introduction to the lab: Explain what the purpose of this lab, overall, was (max of 2 paragraphs)....

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this is a Micro-electric Lab, need to be done using Multisim Live, you need to write a good
Introduction to the lab:Explain what the purpose of this lab, overall, was (max of 2

paragraphs).



Background and Theory:This is an explanation of what you did, experimentally, in the lab. Do NOT include results in this section.




Experimental Results:This is where you present the results of your experiments (data tables, screenshots, graphs, etc.). In addition, briefly explain your results.





Conclusion:This is where you write a summary of the experiment, including answers to all of the questions that were included in the lab handout.













EGRE 207 – Electrical Circuits II EGRE 306 – Introduction to Microelectronics Lab 4 – DC Biasing of BJT – Multisim Version Spring 2021 Using your knowledge of BJTs, you will determine  and use that to design a BJT circuit. Part I – Experimentally Determining  Determine  of a NPN BJT. Use the circuit below, varying the base resistance and create a table that contains experimental values for: Base Resistance Base Current Collector Voltage Collector Current Base-Emitter Voltage Beta Setup of Multisim Using Multisim, simulate the following: 1. Insert a “TRANSISTORS NPN” transistor. 2. Set the beta value to 250 by: a. Double-click on the transistor, b. look at right-hand side panel c. Look under “Model” d. Change the max forward beta (BF) to 250 Experiment Use the following RB values: · 1k, 10k, 22k, 56k, 100k, 200k, 500k, 1M, 2M Using this transistor, measure all 6 parameters above and place them in a table for each RB value. Replace RB and repeat until all measurements have been taken. Hint: Part II – BJT Biasing Simulation 1 Using Multisim, simulate the following: 1. Insert the same NPN transistor with the same max forward beta = 250 2. Add resistors and voltage sources so that it is the same circuit as part I. Using this transistor, with a beta of 250, calculate the base and collector resistances that will yield a bias point of: Collector voltage = 8V Collector current = 15mA Then simulate your design in Multisim, using probes to measure the collector voltage and collector current, ensuring that your design works properly (values within 5% of the specifications). Part III – BJT Biasing Simulation 2 Using Multisim, simulate the following: 1. Insert the same NPN transistor with the new max forward beta = 200 2. Add resistors and voltage sources so that it is the same circuit as part I. Using this transistor, with a beta of 200, calculate the base and collector resistances that will yield a bias point of: Collector voltage = 6V Collector current = 10mA Then simulate your design in Multisim, using probes to measure the collector voltage and collector current, ensuring that your design works properly (values within 5% of the specifications). A copy of this page should be submitted with your lab report. Calculations may be typed in or written in on this page and should also be in the lab report. Part I Data / Calculations(Can be done in Excel) = ___________________ ___RB_______VC_______VBE_______IC_______IB_______β____ Part II Calculations RC = ________________RB = ________________ Measured Values (Part II): VC = ________________________ IC = ______________________ Part III Calculations RC = ________________RB = ________________ Measured Values (Part III): VC = _______________________ IC = _____________________ Lab Report (One per PERSON) The lab report should follow the format on Canvas. Assume that the audience for this report is an EGRE 306 student who didn’t complete the lab, but wants to know exactly what you did. He/she has been to class, so they are familiar with the concepts and the equipment that you use. Your lab report should contain the following sections, in the order below. Be sure the label each of the sections. 1. Cover Page (see Canvas for template) 2. Introduction to the lab: Explain what the purpose of this lab, overall, was (max of 2 paragraphs). 3. Background and Theory: This includes relevant background information which explains why your experiment worked the way that it did. 3. Procedure: This is an explanation of what you did, experimentally, in the lab. Do NOT include results in this section. 4. Experimental Results: This is where you present the results of your experiments (data tables, screenshots, graphs, etc.). In addition, briefly explain your results. 5. Conclusion: This is where you write a summary of the experiment, including answers to all of the questions that were included in the lab handout. Specific items that you should include are: Description of HOW your determined beta. Step-by-step explanation of how you determined the resistor values for your biasing circuit. Results from Part II and III. You should include a description of how you made your calculations, how you set up the simulation and the simulation results. These should be included in the appropriate sections of the report by adding the information in your report: Background/Theory (Part II & III) – determining RC and RB Simulation Procedure (Part II & III) – How you set up your simulation Simulation Results (Part II & III) – Results that demonstrate that your simulation provides the correct collector voltage and current Discussion (Part II & III) – Discuss the differences between the results you saw in Part I and how it relates to your results in Part II and III. Lab Report is due at the beginning of your lab 5 session (April 8th). C B i i b = Rb 12V 1kΩ 5V
Answered Same DayApr 04, 2021

Answer To: this is a Micro-electric Lab, need to be done using Multisim Live, you need to write a good...

Rahul answered on Apr 05 2021
141 Votes
EGRE 207 – Electrical Circuits II
EGRE 306 – Introduction to Microelectronics
Lab 4 – DC Biasing of BJT – Multisim V
ersion
Spring 2021
1. Introduction to the lab:
The purpose of the lab is to determine beta values at different biasing points. Through this lab, we can also see how the beta value changes based on the resistance values. This will further help us to know the DC biasing of BJT
2. Background and Theory:
NPN transistor works in forward bias when the emitter-base junction is forward bias and collector-base junction is reverse biased. Beta of a transistor is defined as the ratio of collector current to the base current. Beta value varies according to the biasing conditions and is not constant. When the base resistance is high, base current is low and hence beta value is high until it reaches saturation when it is constant.
When the NPN transistor works as a switch, then base emitter voltage is 0.7 V and collector emitter voltage varies from 0.2 to 1 V.
We can then calculate the resistance values by KVL at both the junctions.
3. Procedure:
Part 1:
Draw the required circuit in the multisim software. For changing the beta value, double click on...
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